FOTOTRANSISTOR 3MM 940NM GLASHELDER 40 GRADEN
€ 0,61
€ 0,50
Artikelnummer
LTR4206
- ArtikelnummerLTR4206
- MerkLITEON
- Aantal 10+ € 0,54 € 0,45
The LTR-4206 series consist of a NPN silicon
phototransistor mounted in a lensed, clear plastic, end
looking package. The lensing effect of the package
allows an acceptance half angle of 10 measured from
the optical axis to the half power point. This series is
mechanically and spectrally matched to the LTE-4206
series of infrared emitting diodes. The LTR-4206E is a
special dark plastic package that cut the visible light
and suitable for the detectors of infrared application.
WLS: 940nm
AHS: 20°
UCEO: 30V
ICEO: 100nA
IC(on): 0,8mA
WLS = Wavelength Of Peak Sensitivity, AHS= Angle Of Hall Sensitivity, UCEO = Collector Emitter Voltage At Open Base, ICEO = Max. Collector Dark Current, IC(on) = Min. On State Collector Current
phototransistor mounted in a lensed, clear plastic, end
looking package. The lensing effect of the package
allows an acceptance half angle of 10 measured from
the optical axis to the half power point. This series is
mechanically and spectrally matched to the LTE-4206
series of infrared emitting diodes. The LTR-4206E is a
special dark plastic package that cut the visible light
and suitable for the detectors of infrared application.
WLS: 940nm
AHS: 20°
UCEO: 30V
ICEO: 100nA
IC(on): 0,8mA
WLS = Wavelength Of Peak Sensitivity, AHS= Angle Of Hall Sensitivity, UCEO = Collector Emitter Voltage At Open Base, ICEO = Max. Collector Dark Current, IC(on) = Min. On State Collector Current
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